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K6F8016R6B Datasheet, Samsung semiconductor

K6F8016R6B ram equivalent, 512k x16 bit super low power and low voltage full cmos static ram.

K6F8016R6B Avg. rating / M : 1.0 rating-11

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K6F8016R6B Datasheet

Features and benefits


* Process Technology: Full CMOS
* Organization: 512K x16
* Power Supply Voltage: 1.65~2.2V
* Low Data Retention Voltage: 1.0V(Min)
* Three State Outpu.

Description

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low d.

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TAGS

K6F8016R6B
512K
x16
bit
Super
Low
Power
and
Low
Voltage
Full
CMOS
Static
RAM
K6F8016R6A
K6F8016R6D
K6F8016T6C
Samsung semiconductor

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